Speaker: Zhou Shengqiang, tenured researcher

Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden

Time: 3:30 PM, 2023.11.7 (Tuesday)

Venue: Conference Room 612, Hui Xing Building, Yuehai Campus

Inviter: Professor Zeng Yujia

Abstract:

Ion implantation followed by thermal annealing is a well-established method to dope semiconductors, e.g. Si and Ge. This approach has been maturely integrated with the integrated circuit (IC) industry production line for area- and depth-selective n/p doping as well as for lifetime engineering [1]. As a national lab in Germany, our center is running an Ion Beam Center for materials research [2]. It is open free to the international community for fundamental research based on a proposal system. With my research department “Semiconductor Materials”, we are running unique annealing methods, including millisecond flash lamp annealing and nanosecond pulsed laser melting, to repair the ion beam induced damage and to activate the dopants [3, 4]. I will show diverse research examples by using ion beam to modify semiconductor materials. They include pushing the doping limits in semiconductors well above the solubility limits [5-7], functionalizing 2D materials [8] and creating color centers for quantum technologies [9, 10].

[1] Ye Yuan, S. Zhou and X. Wang, Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices, J. Semicond. 43 063101 (2022).

[2] https://www.hzdr.de/db/Cms?pNid=1984

[3] S. Zhou, Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting, J. Phys. D: Appl. Phys. 48, 263001 (2015) (Topical Review)

[4] L. Rebohle, S. Prucnal, Y. Berencén, V. Begeza, S. Zhou, A snapshot review on flash lamp annealing of semiconductor materials, MRS Advances 7, 1301–1309 (2022)

[5] M. Wang et al, Breaking the doping limit in silicon by deep impurities, Phys. Rev. Appl. 11, 054039 (2019)

[6] S. Prucnal, et al., Dissolution of donor-vacancy clusters in heavily doped n-type germanium, New J. Phys. 22, 123036 (2020)

[7] M. Hoesch, Active sites of Te-hyperdoped silicon by hard x-ray photoelectron spectroscopy, Appl. Phys. Lett. 122, 252108 (2023)

[8] F. Long, Ferromagnetic interlayer coupling in CrSBr crystals irradiated by ions, arXiv:2305.18791 (2023)

[9] C. Kasper, et al, Influence of irradiation on defect spin coherence in silicon carbide, Phys. Rev. Appl. 13, 044054 (2020)

[10] Z. Shang, et al, Microwave-assisted spectroscopy of vacancy-related spin centers in hexagonal SiC, Phys. Rev. Appl. 15, 034059 (2021)

Bio sketch:

   Shengqiang Zhou is the department leader of “Semiconductor Materials” at Helmholtz-Zentrum Dresden-Rossendorf, Germany. He received a Bachelor degree in Physics in 1999 and Master degree in Nuclear and Particle physics in 2002, both from Peking University in China. He obtained his PhD in Physics in 2008 from the Technical University of Dresden. From 2008 to 2010 he was a postdoc at the Research-Center Dresden-Rossendorf focusing on the ion implantation into Ge. In 2010 he returned to Peking University as a research professor. From 2011 to 2016, he was leading a Helmholtz Young Investigator Group at Helmholtz-Zentrum Dresden-Rossendorf. Since 2018, he became the department leader of “Semiconductor Materials” at Helmholtz-Zentrum Dresden-Rossendorf. He is working on semiconductors (mainly GaAs, Si, Ge and SiC) processed by ion implantation and by milli-second flash lamp or nano-second pulsed laser. Dr. Zhou won the IBMM Young Scientist Awards in 2012 and has acquired 4 DFG (German Research Foundation) projects and 3 Helmholtz funds. He supervised 10 PhD students, 4 Master students and 6 Postdocs (including 2 Humboldt fellows). He published more than 200 papers with > 8000 citations.